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| VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1273 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1634-00 June 05 * * * * * Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Limited by Tvjmax VGE = 0 V, Tvj 25 C min max 1200 100 200 Unit V A A V s C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12L1273 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 100 A, RG = 6.8 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 6.8 , L = 60 nH, inductive load, FWD: 5SLX12H1200 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 100 A, VGE = 15 V VCE = 1200 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1200 1.7 typ max Unit V 1.9 2.1 2.3 100 V V A A nA V nC nF ns ns ns ns 400 -200 4.5 985 9.43 0.62 0.39 4 185 210 60 65 410 470 50 70 7.5 200 6.5 VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C IC = 100 A, VCE = 600 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Turn-on switching energy Eon mJ 11.8 6.3 mJ 10.1 560 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1634-00 June 05 page 2 of 5 5SMX 12L1273 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 12.6 x 12.6 11.0 x 11.0 1.2 x 1.2 130 20 AlSi1 Al / Ti / Ni / Ag 4 1.8 mm mm mm m m m LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1634-00 June 05 page 3 of 5 5SMX 12L1273 200 200 VCE = 20 V 150 25 C 125 C 150 IC [A] 100 IC [A] 100 125 C 50 50 25 C VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.07 VCC = 600 V RGon = 6.8 ohm RGoff = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH Eon, E off [J] 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 Eoff 0.010 Eoff VCC = 600 V IC = 100 A VGE = 15 V Tvj = 125 C L = 60 nH Eon 0.06 0.05 Eon, Eoff [J] 0.04 Eon 0.03 0.02 0.01 0.005 0.00 0 50 100 150 IC [A] 200 250 300 0.000 0 10 20 30 40 50 60 70 RG [ohm] Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1634-00 June 05 page 4 of 5 5SMX 12L1273 20 100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 800 V 15 VCC = 600 V 10 VGE [V] 10 C [nF] Coes 1 5 Cres IC = 100 A Tvj = 25 C 0 0.0 0.1 0.2 0.3 0.4 0.5 Qg [C] 0.6 0.7 0.8 0.9 0.1 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1634-00 June 05 |
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